IXTY44N10T

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IXTY44N10T概述

TO-252AA N-CH 100V 44A

Create an effective common drain amplifier using this power MOSFET from Ixys Corporation. Its maximum power dissipation is 130000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes TrenchFET technology.


得捷:
MOSFET N-CH 100V 44A TO252


贸泽:
MOSFET 44 Amps 100V 25.0 Rds


艾睿:
Create an effective common drain amplifier using this IXTY44N10T power MOSFET from Ixys Corporation. Its maximum power dissipation is 130000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes TrenchFET technology.


Verical:
Trans MOSFET N-CH 100V 44A Automotive 3-Pin2+Tab DPAK


DeviceMart:
MOSFET N-CH 100V 44A TO-252


Win Source:
MOSFET N-CH 100V 44A TO-252


IXTY44N10T中文资料参数规格
技术参数

通道数 1

漏源极电阻 22 mΩ

极性 N-CH

耗散功率 130 W

阈值电压 4.5 V

漏源极电压Vds 100 V

漏源击穿电压 85 V

连续漏极电流Ids 44A

上升时间 47 ns

输入电容Ciss 1262pF @25VVds

下降时间 32 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 130W Tc

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

长度 6.22 mm

宽度 6.73 mm

高度 2.38 mm

封装 TO-252-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IXTY44N10T
型号: IXTY44N10T
制造商: IXYS Semiconductor
描述:TO-252AA N-CH 100V 44A
替代型号IXTY44N10T
型号/品牌 代替类型 替代型号对比

IXTY44N10T

IXYS Semiconductor

当前型号

当前型号

STD40NF10

意法半导体

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IXTY44N10T和STD40NF10的区别

IXTP44N10T

IXYS Semiconductor

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