TO-252AA N-CH 100V 44A
Create an effective common drain amplifier using this power MOSFET from Ixys Corporation. Its maximum power dissipation is 130000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes TrenchFET technology.
得捷:
MOSFET N-CH 100V 44A TO252
贸泽:
MOSFET 44 Amps 100V 25.0 Rds
艾睿:
Create an effective common drain amplifier using this IXTY44N10T power MOSFET from Ixys Corporation. Its maximum power dissipation is 130000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes TrenchFET technology.
Verical:
Trans MOSFET N-CH 100V 44A Automotive 3-Pin2+Tab DPAK
DeviceMart:
MOSFET N-CH 100V 44A TO-252
Win Source:
MOSFET N-CH 100V 44A TO-252
通道数 1
漏源极电阻 22 mΩ
极性 N-CH
耗散功率 130 W
阈值电压 4.5 V
漏源极电压Vds 100 V
漏源击穿电压 85 V
连续漏极电流Ids 44A
上升时间 47 ns
输入电容Ciss 1262pF @25VVds
下降时间 32 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 130W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.22 mm
宽度 6.73 mm
高度 2.38 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXTY44N10T IXYS Semiconductor | 当前型号 | 当前型号 |
STD40NF10 意法半导体 | 功能相似 | IXTY44N10T和STD40NF10的区别 |
IXTP44N10T IXYS Semiconductor | 功能相似 | IXTY44N10T和IXTP44N10T的区别 |