FQD12N20LTM

FQD12N20LTM概述

FAIRCHILD SEMICONDUCTOR  FQD12N20LTM  晶体管, MOSFET, N沟道, 9 A, 200 V, 0.22 ohm, 10 V, 2 V

The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.

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100% Avalanche tested
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16nC Typical low gate charge
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17pF Typical low Crss
FQD12N20LTM数据文档
型号 品牌 下载
FQD12N20LTM

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FQD19N10TM

Fairchild 飞兆/仙童

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