FAIRCHILD SEMICONDUCTOR FQD13N10TM 晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 4 V
Description
This N-Channel enhancement mode power MOSFET is produced using Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
• 10 A, 100 V, RDSon = 180 mΩ Max @VGS = 10V, ID = 5.0 A
• Low Gate Charge Typ. 12 nC
• Low Crss Typ. 20 pF
• 100% Avalanche Tested
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