LdmoST 塑料系列 N沟道 增强模式 射频 功率晶体管
Amplifying and switching electronic signals in radio frequency environments is easy with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 95000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD85035-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025S-E | ST Microelectronics 意法半导体 | 下载 |
| PD85004 | ST Microelectronics 意法半导体 | 下载 |
| PD85006L-E | ST Microelectronics 意法半导体 | 下载 |
| PD85006TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85015STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85015TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85035STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025-E | ST Microelectronics 意法半导体 | 下载 |