STMICROELECTRONICS STGWT80V60DF 单晶体管, IGBT, 120 A, 1.85 V, 469 W, 600 V, TO-3P, 3 引脚 新
Minimize the current at your gate with the IGBT transistor from STMicroelectronics. Its maximum power dissipation is 469000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGWT80V60DF | ST Microelectronics 意法半导体 | 下载 |
| STGW20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGW35HF60W | ST Microelectronics 意法半导体 | 下载 |
| STGWT30H65FB | ST Microelectronics 意法半导体 | 下载 |
| STGWT30H60DFB | ST Microelectronics 意法半导体 | 下载 |
| STGW19NC60W | ST Microelectronics 意法半导体 | 下载 |
| STGWT40H60DLFB | ST Microelectronics 意法半导体 | 下载 |
| STGWT40H65DFB | ST Microelectronics 意法半导体 | 下载 |
| STGW30H60DFB | ST Microelectronics 意法半导体 | 下载 |
| STGWT20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGWT30V60F | ST Microelectronics 意法半导体 | 下载 |