STGW60H65DF 系列 650 V 120 A 场截止 沟道栅 IGBT - TO-247-3
The IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 350 V. Its maximum power dissipation is 360000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGW60H65DF | ST Microelectronics 意法半导体 | 下载 |
| STGW20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGW35HF60W | ST Microelectronics 意法半导体 | 下载 |
| STGWT30H65FB | ST Microelectronics 意法半导体 | 下载 |
| STGWT30H60DFB | ST Microelectronics 意法半导体 | 下载 |
| STGW19NC60W | ST Microelectronics 意法半导体 | 下载 |
| STGWT40H60DLFB | ST Microelectronics 意法半导体 | 下载 |
| STGWT40H65DFB | ST Microelectronics 意法半导体 | 下载 |
| STGW30H60DFB | ST Microelectronics 意法半导体 | 下载 |
| STGWT20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGWT30V60F | ST Microelectronics 意法半导体 | 下载 |