BSI BRILLIANCE SEMICONDUCTOR BS62LV1027TIP55 芯片, SRAM, 1M, 128KX8, 2.4-5.5V, TSOP32
DESCRIPTION
The BS62LV1027 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 8 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.02uA at 3.0V/25OC and maximum access time of 55ns at 3.0V/85OC.
FEATURES
Wide VCC operation voltage : 2.4V ~ 5.5V
Very low power consumption :
VCC = 3.0V Operation current : 18mA Max. at 55ns
2mA Max. at 1MHz
Standby current : 0.02uA Typ.at 25 OC
VCC = 5.0V Operation current : 47mA Max. at 55ns
10mA Max. at 1MHz
Standby current : 0.4uA Typ. at 25OC
High speed access time :
-55 55ns Max. at VCC : 3.0~5.5V
-70 70ns Max. at VCC : 2.7~5.5V
Automatic power down when chip is deselected
Easy expansion with CE2, CE1 and OE options
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
型号 | 品牌 | 下载 |
---|---|---|
BS62LV1027TIP55 | BSI | 下载 |
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BS62LV4006STIP55 | BSI | 下载 |
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BS62LV256TIP55 | BSI | 下载 |