IPP60R099P6XKSA1

晶体管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V

Summary of Features:

.

Reduced gate charge Q g

.

Higher V th

.

Good body diode ruggedness

.

Optimized integrated R g

.

Improved dv/dt from 50V/ns

.

CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits:

.

Improved effciency especially in light load condition

.

Better efficiency in soft switching applications due to earlier turn-off

.

Suitable for hard- & soft-switching topologies

.

Optimized balance of efficiency and ease of use and good controllability of switching behavior

.

High robustness and better efficiency

.

Outstanding quality & reliability