IXYS SEMICONDUCTOR IXFN230N10 晶体管, MOSFET, N沟道, 230 A, 100 V, 6 mohm, 10 V, 4 V
The is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode HiPerFET™. It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
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- International standard packages
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- MiniBLOC with aluminium nitride isolation
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- Rugged polysilicon gate cell structure
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- Avalanche rating
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- Guaranteed FBSOA
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- Low package inductance
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- Easy to mount
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- Space saving
通道数 1
针脚数 4
漏源极电阻 0.006 Ω
极性 N-Channel
耗散功率 700 W
阈值电压 4 V
漏源极电压Vds 100 V
连续漏极电流Ids 230 A
上升时间 150 ns
输入电容Ciss 19000pF @25VVds
额定功率Max 700 W
下降时间 60 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 700W Tc
安装方式 Chassis
引脚数 4
封装 SOT-227-4
宽度 25.42 mm
封装 SOT-227-4
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Lighting, 照明, Power Management, ??, ????, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFN230N10 IXYS Semiconductor | 当前型号 | 当前型号 |
IXFN200N10P IXYS Semiconductor | 类似代替 | IXFN230N10和IXFN200N10P的区别 |
IXFN180N10 IXYS Semiconductor | 类似代替 | IXFN230N10和IXFN180N10的区别 |
IXFN280N085 IXYS Semiconductor | 类似代替 | IXFN230N10和IXFN280N085的区别 |