IPD082N10N3 G概述
Trans MOSFET N-CH 100V 80A 3Pin TO-252 T/R
Summary of Features:
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- Excellent switching performance
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- World’s lowest R DSon
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- Very low Q g and Q gd
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- Excellent gate charge x R DSon product FOM
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- RoHS compliant-halogen free
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- MSL1 rated 2
Benefits:
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- Environmentally friendly
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- Increased efficiency
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- Highest power density
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- Less paralleling required
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- Smallest board-space consumption
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- Easy-to-design products
IPD082N10N3 G中文资料参数规格
技术参数
通道数 1
耗散功率 125 W
阈值电压 2 V
漏源极电压Vds 100 V
上升时间 42 ns
输入电容Ciss 3980pF @50VVds
额定功率Max 125 W
下降时间 8 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 125000 mW
封装参数
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
外形尺寸
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
物理参数
工作温度 -55℃ ~ 175℃
其他
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Or-ing switches and circuit breakers in 48V systems, Class D audio amplifiers, Uninterruptable power supplies UPS, Synchronous rectification for AC-DC SMPS, Isolated DC-DC converters telecom and datacom systems
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
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