STGB30V60DF

STGB30V60DF概述

Trans IGBT Chip N-CH 600V 60A 3Pin D2PAK T/R

The IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.

STGB30V60DF数据文档
型号 品牌 下载
STGB30V60DF

ST Microelectronics 意法半导体

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STGB10NB40LZT4

ST Microelectronics 意法半导体

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STGB10NC60KT4

ST Microelectronics 意法半导体

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STGB19NC60KT4

ST Microelectronics 意法半导体

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STGB30NC60WT4

ST Microelectronics 意法半导体

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STGB30NC60KT4

ST Microelectronics 意法半导体

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STGB20NB41LZT4

ST Microelectronics 意法半导体

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STGB40V60F

ST Microelectronics 意法半导体

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STGB19NC60WT4

ST Microelectronics 意法半导体

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STGB20V60DF

ST Microelectronics 意法半导体

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STGB20NB37LZT4

ST Microelectronics 意法半导体

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