单晶体管, IGBT, 14 A, 2.3 V, 75 W, 1.2 kV, TO-220AB, 3 引脚
The IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
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