IGBT 晶体管 EAS 450mJ 345V PowerMESH IGBT
Minimize the current at your gate with the IGBT transistor from STMicroelectronics. Its maximum power dissipation is 176000 mW. It has a maximum collector emitter voltage of 320 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGP35N35LZ | ST Microelectronics 意法半导体 | 下载 |
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| STGP30NC60W | ST Microelectronics 意法半导体 | 下载 |
| STGP7NC60H | ST Microelectronics 意法半导体 | 下载 |
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| STGP30H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGP19NC60HD | ST Microelectronics 意法半导体 | 下载 |
| STGP40V60F | ST Microelectronics 意法半导体 | 下载 |
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