STGP10NC60HD 系列 N沟道 600 V 10 A 极快 IGBT 法兰安装 - TO-220-3
You can use this IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 65000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGP10NC60HD | ST Microelectronics 意法半导体 | 下载 |
| STGP3NC120HD | ST Microelectronics 意法半导体 | 下载 |
| STGP30NC60W | ST Microelectronics 意法半导体 | 下载 |
| STGP7NC60H | ST Microelectronics 意法半导体 | 下载 |
| STGP30H65F | ST Microelectronics 意法半导体 | 下载 |
| STGP35HF60W | ST Microelectronics 意法半导体 | 下载 |
| STGP30H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGP35N35LZ | ST Microelectronics 意法半导体 | 下载 |
| STGP19NC60HD | ST Microelectronics 意法半导体 | 下载 |
| STGP40V60F | ST Microelectronics 意法半导体 | 下载 |
| STGP10NB37LZ | ST Microelectronics 意法半导体 | 下载 |