N沟道14A - 600V TO- 220 / DPAK非常快的PowerMESH IGBT N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT
The IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 80000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
型号 | 品牌 | 下载 |
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STGP7NC60H | ST Microelectronics 意法半导体 | 下载 |
STGP10NC60HD | ST Microelectronics 意法半导体 | 下载 |
STGP3NC120HD | ST Microelectronics 意法半导体 | 下载 |
STGP30NC60W | ST Microelectronics 意法半导体 | 下载 |
STGP30H65F | ST Microelectronics 意法半导体 | 下载 |
STGP35HF60W | ST Microelectronics 意法半导体 | 下载 |
STGP30H60DF | ST Microelectronics 意法半导体 | 下载 |
STGP35N35LZ | ST Microelectronics 意法半导体 | 下载 |
STGP19NC60HD | ST Microelectronics 意法半导体 | 下载 |
STGP40V60F | ST Microelectronics 意法半导体 | 下载 |
STGP10NB37LZ | ST Microelectronics 意法半导体 | 下载 |