20 A - 600 V - 短路崎岖IGBT 20 A - 600 V - short circuit rugged IGBT
IGBT - 600 V 35 A 125 W 表面贴装型 D2PAK
立创商城:
STGB19NC60KDT4
得捷:
IGBT 600V 35A 125W D2PAK
艾睿:
Use the STGB19NC60KDT4 IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 125000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans IGBT Chip N-CH 600V 35A 3-Pin2+Tab D2PAK T/R
Chip1Stop:
Trans IGBT Chip N-CH 600V 35A 3-Pin2+Tab D2PAK T/R
Win Source:
IGBT 600V 35A 125W D2PAK
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGB19NC60KDT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB10NB40LZT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB10NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB19NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB30NC60WT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB30NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB20NB41LZT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB40V60F | ST Microelectronics 意法半导体 | 下载 |
| STGB19NC60WT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB20V60DF | ST Microelectronics 意法半导体 | 下载 |
| STGB20NB37LZT4 | ST Microelectronics 意法半导体 | 下载 |