RF功率晶体管， LDMOST塑料家族的N沟道增强模式，横向MOSFET的 RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
If you need a MOSFET for radio frequency environments, STMicroelectronics offers this RF amplifier that amplifies and switches between electronic signals. Its maximum power dissipation is 31700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. Its maximum frequency is 1000 MHz.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD55003TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD55003L-E | ST Microelectronics 意法半导体 | 下载 |
| PD55025-E | ST Microelectronics 意法半导体 | 下载 |
| PD55008S-E | ST Microelectronics 意法半导体 | 下载 |
| PD55025S-E | ST Microelectronics 意法半导体 | 下载 |
| PD55035-E | ST Microelectronics 意法半导体 | 下载 |
| PD55008-E | ST Microelectronics 意法半导体 | 下载 |
| PD55015-E | ST Microelectronics 意法半导体 | 下载 |
| PD55008L-E | ST Microelectronics 意法半导体 | 下载 |
| PD55015TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD55025TR-E | ST Microelectronics 意法半导体 | 下载 |