IPB036N12N3GATMA1

INFINEON  IPB036N12N3GATMA1  晶体管, MOSFET, N沟道, 180 A, 120 V, 0.0029 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，100V 及以上

得捷:
MOSFET N-CH 120V 180A TO263-7

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB036N12N3GATMA1, 180 A, Vds=120 V, 7引脚 D2PAK TO-263封装

立创商城:
N沟道 120V 180A

贸泽:
MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPB036N12N3GATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

TME:
Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3

Verical:
Trans MOSFET N-CH 120V 180A Automotive 7-Pin6+Tab D2PAK T/R

Newark:
# INFINEON  IPB036N12N3GATMA1  MOSFET Transistor, N Channel, 180 A, 120 V, 0.0029 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 120V 180A TO263-7 / N-Channel 120 V 180A Tc 300W Tc Surface Mount PG-TO263-7