Trans IGBT Chip N-CH 600V 60A 150000mW 3Pin2+Tab D2PAK T/R
Use the IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 150000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGB30H60DF | ST Microelectronics 意法半导体 | 下载 |
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| STGB19NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB30NC60WT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB30NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
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| STGB40V60F | ST Microelectronics 意法半导体 | 下载 |
| STGB19NC60WT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB20V60DF | ST Microelectronics 意法半导体 | 下载 |
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