STU6N65M2

STMICROELECTRONICS  STU6N65M2  功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V

通孔 N 通道 650 V 4A（Tc） 60W（Tc） IPAK（TO-251）

得捷:
MOSFET N-CH 650V 4A IPAK

e络盟:
晶体管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V

艾睿:
Create an effective common drain amplifier using this STU6N65M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 60000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh m2 technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 650V 4A 3-Pin IPAK Tube

Chip1Stop:
Trans MOSFET N-CH 650V 4A 3-Pin3+Tab IPAK Tube

Verical:
Trans MOSFET N-CH 650V 4A 3-Pin3+Tab IPAK Tube

儒卓力:
**N-CH 650V 4A 1350mOhm TO251 **