35 A - 1200 V - 非常快速的IGBT 35 A - 1200 V - very fast IGBT
The IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 220000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
得捷:
IGBT 1200V 60A 235W TO247
贸泽:
IGBT Transistors PowerMESH IGBT
艾睿:
The STGW35NC120HD IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 220000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 58A 3-Pin3+Tab TO-247
DeviceMart:
IGBT N-CH 35A 1200V TO-247
型号 | 品牌 | 下载 |
---|---|---|
STGW35NC120HD | ST Microelectronics 意法半导体 | 下载 |
STGW20H60DF | ST Microelectronics 意法半导体 | 下载 |
STGW35HF60W | ST Microelectronics 意法半导体 | 下载 |
STGWT30H65FB | ST Microelectronics 意法半导体 | 下载 |
STGWT30H60DFB | ST Microelectronics 意法半导体 | 下载 |
STGW19NC60W | ST Microelectronics 意法半导体 | 下载 |
STGWT40H60DLFB | ST Microelectronics 意法半导体 | 下载 |
STGWT40H65DFB | ST Microelectronics 意法半导体 | 下载 |
STGW30H60DFB | ST Microelectronics 意法半导体 | 下载 |
STGWT20H60DF | ST Microelectronics 意法半导体 | 下载 |
STGWT30V60F | ST Microelectronics 意法半导体 | 下载 |