STGB19NC60H 系列 600 V 19 A 耐短路 IGBT 表面贴装 - D2PAK
You won"t need to worry about any lagging in your circuit with this IGBT transistor from STMicroelectronics. Its maximum power dissipation is 130000 mW. It has a maximum collector emitter voltage of 600 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGB19NC60HDT4 | ST Microelectronics 意法半导体 | 下载 |
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