SIR422DP-T1-GE3概述
VISHAY SIR422DP-T1-GE3 晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 µohm, 10 V, 1.2 V
The is a 40V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
- .
- Halogen-free according to IEC 61249-2-21 definition
- .
- 100% Rg Tested
- .
- 100% UIS Tested
SIR422DP-T1-GE3中文资料参数规格
SIR422DP-T1-GE3引脚图与封装图 
在线购买SIR422DP-T1-GE3
型号： SIR422DP-T1-GE3
描述：VISHAY SIR422DP-T1-GE3 晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 µohm, 10 V, 1.2 V
替代型号SIR422DP-T1-GE3
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SIR422DP-T1-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SI7884BDP-T1-GE3 威世 | 类似代替 | SIR422DP-T1-GE3和SI7884BDP-T1-GE3的区别 |