SIE802DF-T1-GE3

SIE802DF-T1-GE3图片1
SIE802DF-T1-GE3中文资料参数规格
封装参数

封装 PolarPAK-10

外形尺寸

封装 PolarPAK-10

其他

Packaging Reel

Part-Aliases SIE802DF-GE3

Mounting-Style SMD/SMT

Package-Case PolarPAK-10

Technology Si

Number-of-Channels 1 Channel

Configuration Single

Transistor-Type 1 N-Channel

Pd-Power-Dissipation 5.2 W

Maximum-Operating-Temperature \+ 150 C

Minimum-Operating-Temperature \- 55 C

Vgs-Gate-Source-Voltage 20 V

Id-Continuous-Drain-Current 42.7 A

Vds-Drain-Source-Breakdown-Voltage 30 V

Rds-On-Drain-Source-Resistance 1.9 mOhms

Transistor-Polarity N-Channel

数据手册

在线购买SIE802DF-T1-GE3
型号: SIE802DF-T1-GE3
描述:MOSFET 30V 202A 125W 1.9mohm @ 10V

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