IGC05R60DEX1SA2

IGC05R60DEX1SA2图片1
IGC05R60DEX1SA2概述

The reverse conducting TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and a monolithically integrated diode

Summary of Features:

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Monolithical diode included
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Optimized V CEsat and V F for low conduction losses
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Smooth switching performance leading to low EMI levels
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Very tight parameter distribution
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Operating range of 1 to 20kHz
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Maximum junction temperature 175°C
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Short circuit capability of 5μs

Target Applications:

IGC05R60DEX1SA2中文资料参数规格
技术参数

工作温度Max 175 ℃

工作温度Min -40 ℃

封装参数

引脚数 3

封装 --

外形尺寸

封装 --

其他

产品生命周期 Active

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IGC05R60DEX1SA2
型号: IGC05R60DEX1SA2
制造商: Infineon 英飞凌
描述:The reverse conducting TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and a monolithically integrated diode

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