STMICROELECTRONICS STD11N65M2 功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
N-Channel 650V 7A Tc 85W Tc Surface Mount DPAK
欧时:
STMicroelectronics, STD11N65M2
得捷:
MOSFET N-CH 650V 7A DPAK
立创商城:
STD11N65M2
艾睿:
Amplify electronic signals and switch between them with the help of STMicroelectronics&s; STD11N65M2 power MOSFET. Its maximum power dissipation is 85000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes mdmesh ii plus technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 650V 7A 3-Pin DPAK T/R
Chip1Stop:
Trans MOSFET N-CH 650V 7A 3-Pin2+Tab DPAK T/R
Verical:
Trans MOSFET N-CH 650V 7A 3-Pin2+Tab DPAK T/R
Newark:
# STMICROELECTRONICS STD11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
Win Source:
MOSFET N-CH 650V 7A DPAK
针脚数 3
漏源极电阻 0.6 Ω
极性 N-Channel
耗散功率 85 W
阈值电压 3 V
漏源极电压Vds 650 V
上升时间 7.5 ns
输入电容Ciss 410pF @100VVds
额定功率Max 85 W
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 85W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 无铅
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17