IPN70R1K0CEATMA1

IPN70R1K0CEATMA1图片1
IPN70R1K0CEATMA1图片2
IPN70R1K0CEATMA1概述

晶体管, MOSFET, N沟道, 7.4 A, 700 V, 0.9 ohm, 10 V, 3 V

Description:

CoolMOS™ CE is a technology platform of ´s market leading high voltage power MOSFET designed according to the superjunction principle SJ and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools,  LCD,  LED TV and  LED lighting applications.

 

Summary of Features:

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Thermal behavior
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≤ 90°C on device, open case
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≤ 50°C/70°C close case temperature
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„EMI within EN55022B standard
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Ease of use and fast design-in

Benefits:

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Low conduction losses from large margin between R DSon typical to nominal
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„Low switching losses from optimized output capacitance E oss
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„Optimized EMI to balance switching speed and EMI behavior
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„Good controllability given the integrated R g

Target Applications:

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Low power chargers
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Adapters
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PC silverbox
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LCD TV
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LED retrofit
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LED drivers
IPN70R1K0CEATMA1中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.9 Ω

耗散功率 5 W

阈值电压 3 V

漏源极电压Vds 700 V

上升时间 5.2 ns

输入电容Ciss 328pF @100VVds

下降时间 13.6 ns

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 5000 mW

封装参数

引脚数 3

封装 SOT-223-3

外形尺寸

封装 SOT-223-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买IPN70R1K0CEATMA1
型号: IPN70R1K0CEATMA1
描述:晶体管, MOSFET, N沟道, 7.4 A, 700 V, 0.9 ohm, 10 V, 3 V

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