STB6NK90ZT4

STMICROELECTRONICS  STB6NK90ZT4  功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V

N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics

欧时:
### N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics### MOSFET 晶体管，STMicroelectronics

立创商城:
STB6NK90ZT4

得捷:
MOSFET N-CH 900V 5.8A D2PAK

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics&s; STB6NK90ZT4 power MOSFET can provide a solution. Its maximum power dissipation is 140000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology.

安富利:
Trans MOSFET N-CH 900V 5.8A 3-Pin2+Tab D2PAK T/R

Chip1Stop:
Trans MOSFET N-CH 900V 5.8A 3-Pin2+Tab D2PAK T/R

Verical:
Trans MOSFET N-CH 900V 5.8A 3-Pin2+Tab D2PAK T/R

Newark:
# STMICROELECTRONICS  STB6NK90ZT4  Power MOSFET, N Channel, 5.8 A, 900 V, 1.56 ohm, 10 V, 3.75 V

儒卓力:
**N-CH 900V 6A 2000mOhm TO263-3 **

力源芯城:
900V,1.56Ω,5.8A,N沟道功率MOSFET

DeviceMart:
MOSFET N-CH 900V 5.8A D2PAK

Win Source:
MOSFET N-CH 900V 5.8A D2PAK